smd type ic www.kexin.com.cn 1 mosfet smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source silicon n-channel mosfet 2SK2735S features low on-resistance r ds =20m typ. high speed switching 4v gate drive device can be driven from 5v source absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v i d 20 a i dp *80 a power dissipation p d 20 w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain source breakdown voltage v dss i d =10ma,v gs =0v 30 v drain cut-off current i dss v ds =30v,v gs =0 10 a gate leakage current i gss v gs = 16v,v ds =0 10 a gate to source cutoff voltage v gs(off) v ds =10v,i d =1ma 1.0 2.0 v forward transfer admittance y fs v ds =10v,i d =10a 8 16 s v gs =10v,i d =10a 20 28 m v gs =4v,i d =10a 35 50 m input capacitance c iss 750 pf output capacitance c oss 520 pf reverse transfer capacitance c rss 210 pf turn-on delay time t on 16 ns rise time t r 225 ns turn-off delay time t off 85 ns fall time tf 90 ns v ds =10v,v gs =0,f=1mhz i d =10a,v gs(on) =10v,rl=1 drain to source on-state resistance r ds(on)
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